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29Te. A layer of In was evaporated onto the surface, and diffused in vacuum. The diffusion profiles were determined by using van der Pauw measurements and serial sectioning. Nemirovsky: Journal of the Electrochemical Society, 1980, 127[6], 1406-8 [190] HgCdTe: O Diffusion 52 A Directory of Arrhenius Parameters The dependence of the diffusivity upon the Hg vapour pressure and the temperature was determined by using tracer techniques. 2Te was governed by neutral atoms, and that the diffusivity was determined by charged atoms of the dopant.

Biermann: Solid State Communications, 1969, 7[24], 1771-5 32 A Directory of Arrhenius Parameters [114] GaAs: Pd Diffusion A study was made of the diffusion coefficient of Pd under various annealing conditions. The extent of diffusion was characterized by using secondary ion mass spectrometry. 51 x 10-12cm2/s, respectively, at 400, 550 and 850C. 35(eV)/kT] This indicated that the major diffusion mechanism of Pd in GaAs was interstitial diffusion. Kuei: Japanese Journal of Applied Physics, 2007, 46[3A], 968-70 [115] GaAs: S Diffusion Liquid-phase epitaxial layers were studied by using a diffusion source which contained GaS and As in a mass ratio of 2:1.

07. This was done by means of energy-dispersive X-ray spectroscopy and secondary ion mass spectrometry. It was found that the interdiffusion coefficients of the constituent cation components (Cd, Hg) depended upon the x and y values, for growth temperatures ranging from 450 to 460C. Their asymmetrical concentration profiles exhibited steep slopes in the Cd-rich substrate and long tails in the Hg-rich layer. The concentration profiles of Zn and Se could be described by constant diffusion coefficients.

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